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BriSCL: Brilliant SemiConductor LaserModules

A cooperation under the roof of Eurostars with the following partners

Project Goals

BriSCL uses novel beam combining, optical resonators, diode laser designs and R&D cutting-edge technology to
enable brighter diode laser modules for the world’s largest laser market: material processing. The technology is
proven, patented, and used in BriSCL to enable further innovation and power scaling. BriSCL will directly produce
> 8x brighter direct diode laser platforms and 4x brighter fibre laser pumps without compromising cost and
efficiency (>40%).

Participants

Monocrom serves as system integrator on the basis of laser bars. Goals are both free space and fiber coupled laser systems to beyond 1 kW of output power.

Development of diode lasers based on efficient ASLOC epitactical layers and BRIS semiconductor technology. This will improve the brillance (by means of improved current confinement) and the yield (by means of better mechanical resilience w.r.t. mounting) in the wavelength range around 915 nm.

Raab-Photonik will develop the underlying concepts of external resonators for improving divergence and thus power density. Also the rectified polarization coupling ("RPC") will be developed, tested and optimized.

Brilliance FAB Berlin GmbH (BFB) mounts single chips and integrates systems on the basis of single emitters.

JENOPTIK Optical Systems GmbH (Berlin) is associated partner of the project and tests the newly developed laser structures for future mass production.

Project results

So far the following results have been made public:

BRIS Strukture

Schematic (not to scale) vertical cross section structure of a W=100µm buried-regrown-implant-structure (BRIS) laser (left) and a W=100µm contact implantation laser (right).

Single Emitter

Mounted single chipchip in sandwich heat-sink for double-sided heat removal for currents up to 100 A.

 

Broad area single emitter of highest power and efficiency

The LIV and conversion efficiency η of wide-aperture single emitters with stripe widths of 400, 1000, 1200, and 1500 μm for 915 nm and 1200 µm for 780 nm at 25 °C in CW operation (sandwich-mounting as inset).

Improving Brightness

Continuous wave lateral brightness measurement of W = 100 μm BRIS and reference single emitters as a function of output power at a heat sink temperature of 25 °C.

 

Excellent Divergence of Bars

When these BRIS lasers are produced as bars of 10 emitters of 100 µm width each and then mounted solder-free by means of clamping the resulting far field divergence achieves an excellent value of only ±3.5⁰ for a 90% power content.

Laser in External Resonator

If such a laser is inserted into a suitable external resonator (bottom right) it becomes possible to drastically improve beam quality. Divergence for the presented case is reduced from originally around ±100 mrad down to ±8 mrad which is more than 12-fold. At the same time the grating inside the resonator allows for a tuning of the wavelengt by more than 20 nm.

High Power Submodule

High power laser module comprising four polarization coupled laser bars which serves as building block for yet larger systems. Size approximately 16x40mm² ; ouput power around 300W.

System for P>1kW

Concept for a system delivering more than 1 kW of output power at a beam quality of BPP<20 mm mrad.

Prototype

First prototype for a system comprising 16 BRIS-bars.

Publications

  • B. King, S. Arslan, A. Boni, P. Della Casa, D. Martin, A. Thies, A. Knigge, P. Crump
    "Buried regrown implant structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency"
    Photonics-West (2023): Proc. SPIE 12403, 124030J (2023)
    https://doi.org/10.1117/12.2647096

  • Ben King, Seval Arslan, Anisuzzaman Boni, Paul Simon Basler, Christof Zink, Pietro Della Casa, Dominik Martin, Andreas Thies, Andrea Knigge, and Paul Crump
    "GAs-based wide-aperture single emitters with 68 W output power at 69% efficiency realized using a periodic buried-regrown-implant-structure"
    CLEO EU Paper CB-11.1
    https://doi.org/10.1109/CLEO/Europe-EQEC57999.2023.10232435

  • S. Arslan, B. King, P. Della Casa, D. Martin, A. Thies, A. Knigge and P. Crump
    "Efficient, High Power, Wide-Aperture Single Emitter Diode Lasers Emitting at 915 nm"
    IEEE Photonics Technol. Lett., vol. 36, no. 16, pp. 977-980 (2024).
    https://doi.org/10.1109/LPT.2024.3419552

  • B. King, S. Arslan, P. Della Casa, D. Martin, A. Boni, A. Thies, A. Knigge and P. Crump
    "High-efficiency and high-brightness broad area laser diodes with buried implantation current blocking"
    OPEN ACCESS Phys. Scr., vol. 99, no. 5, pp. 055528, (2024).
    https://doi.org/10.1088/1402-4896/ad368a

  • B. King, S. Arslan, P. Della Casa, D. Martin, A. Boni, P.S. Basler, A. Thies, A. Knigge, and P Crump
    "Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring"
    Proc. of SPIE, vol. 12867, High-Power Diode Laser Technology XXII, Photonics West, San Francisco, USA, Jan 27 - Feb 1, 128670S (2024).
    https://doi.org/10.1117/12.3005647

Funding

This project is supported by eurostars

E! 114753 (BriSCL)